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Eur. Phys. J. B 7, 147-153
Double-resonant structure in the high-frequency transresistance of coupled electron-hole systems
B. Dong1 - X.L. Lei1,2
1 State Key Laboratory of Functional Materials for
Informatics, Shanghai Institute of
Metallurgy, Chinese Academy of Sciences, 865 Changning Road,
Shanghai 200050, P.R. China
2 China Center of Advanced Science and Technology (World
Laboratory),
P.O. Box 8730, Beijing 100080, P.R. China
dongb@itsvr.sim.ac.cn
Received: 1st April 1998 / Revised: 22 June 1998 / Accepted: 6 August 1998
Abstract
The linear dc and high-frequency transresistivity of coupled electron-hole
systems are investigated using the Lei-Ting balance equations approach
extended to include many-body corrections. A possible indirect method of
experimentally measuring the dynamical transresistivity in the high
frequency (terahertz) regime is designed basing on the detailed analysis on
the relationship between the directly measurable resistivities in the
electron- and hole-layer and the dynamical transresistance. The
theoretically predicted dc transresistance is in good agreement with the
experimental data for the given electron-hole system experimentally
investigated. The calculated dynamical transresistance exhibits pronounced
double-resonant structure, which can be attributed to the cooperation and
competition between the two plasmon modes. It is pointed out that the
behavior of the frequency-dependent transresistance is temperature-sensitive
and the dynamical transport properties are essentially influenced by the
short range correlations.
PACS
72.30.+q High-frequency effects; plasma
effects
-
73.50.Mx High-frequency effects; plasma
effects
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