Issue Eur. Phys. J. B Volume 45, Number 1, May I 2005 Page(s) 63 - 68 Section Solid and Condensed State Physics DOI 10.1140/epjb/e2005-00165-8 Published online 16 June 2005

Eur. Phys. J. B 45, 63-68 (2005)
DOI: 10.1140/epjb/e2005-00165-8

Frequency dependent electrical properties of nano-CdS/Ag junctions

D. Mohanta and A. Choudhury

Department of Physics, Tezpur University, P.O. Napaam, Assam-784 028, India

best@tezu.ernet.in

(Received 18 October 2004 / Received in final form 16 February 2005 / Published online 16 June 2005 )

Abstract
Polymer embedded cadmium sulfide nanoparticles/quantum dots were synthesized by a chemical route using polyvinyl alcohol (lmw) as the desired matrix. In an attempt to measure the electrical properties of nano-CdS/Ag samples, we propose that contribution from surface traps are mainly responsible in determining the and characteristics in high frequency ranges. To be specific, beyond 1.2 MHz, the carrier injection from the trap centers of the embedded quantum dots is ensured by large current establishment even at negative biasing condition of the junction. The unexpected nonlinear signature of response is believed to be due to the fact that while trying to follow very high signal frequency (at least 10^-3 of recombination frequency), there is complete abruptness in carrier trapping (charging) or/and detrapping (decay) in a given CdS nanoparticle assembly. The frequency dependent unique role of the trap carriers certainly find application in nanoelectronic devices at a desirable frequency of operation.

PACS
81.05.Dz - II-VI semiconductors.
82.45.Yz - Nanostructured materials in electrochemistry.
73.63.Kv - Quantum dots.
73.21.La - Quantum dots.

© EDP Sciences, Società Italiana di Fisica, Springer-Verlag 2005

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