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Eur. Phys. J. B 69, 321-329 (2009)
DOI: 10.1140/epjb/e2009-00166-7
Electron mobility in wurtzite nitride quantum wells limited by optical-phonons and its pressure effect
Y. Qu and S.L. BanSchool of Physical Science and Technology, Inner Mongolia University Hohhot 010021, P.R. China
slban@imu.edu.cn
Received 18 December 2008 / Received in final form 19 March 2009 / Published online 8 May 2009
Abstract
Based on the dielectric continuum phonon model, uniaxial
model and force balance equation the mobility of two dimensional electron
gas in wurtzite AlxGa1-xN/GaN/AlxGa1-xN quantum wells is
discussed theoretically within the temperature range dominated by optical
phonons. The dependences of the electron mobility on temperature, Al molar
fraction and electron sheet density are presented including hydrostatic
pressure effect. The built-in electric field is also taken into account. It
is found that under normal pressure the main contribution to the mobility is
from the scattering of interface optical phonons in narrow (for well width
d < 12 Å) and wide (for d > 117 Å and d > 65 Å for finitely
thick barriers and infinitely thick ones, respectively) wells, whereas that
is from the scattering of confined optical phonons in a well with an
intermediate width. It is shown that the electron mobility decreases with
increasing Al molar fraction and temperature, whereas increases obviously
with increasing electron sheet density. The theoretical calculated electron
mobility is 978 cm2/V s which is higher than an available experimental
data 875 cm2/V s when x equals to 0.58 at room temperature. The
results under hydrostatic pressure considering the modification of strain
indicate that the mobility increases slightly as hydrostatic pressure
increases from 0 to 10 GPa.
63.20.Kd - Phonon-electron interactions.
72.10.Di - Scattering by phonons, magnons, and other nonlocalized excitations.
73.63.Hs - Quantum wells.
© EDP Sciences, Società Italiana di Fisica, Springer-Verlag 2009
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