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Eur. Phys. J. B 32, 471-476 (2003)
DOI: 10.1140/epjb/e2003-00128-1
Epitaxial growth and magnetic and
electric properties of Co-doped
thin films
Is nonequilibrium doping an essential for ferromagnetism?
J. Li1, C.H. Sow2, X.S. Rao3, C.K. Ong2 and D.N. Zheng11 Institute of Physics, Chinese Academy of Sciences, Beijing 100080, PR China
2 Centre for Superconducting and Magnetic Materials and Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542
3 Temasek Laboratories, Engineering Drive 3, 10 Kent Ridge Crescent, Singapore 119260
lijie@ssc.iphy.ac.cn
(Received 8 January 2003 / Received in final form 7 March 2003 Published online 7 May 2003)
Abstract
In this research, c-axis oriented epitaxial
anatase
thin films were grown on
substrates using a ceramic
target by Pulsed Laser Deposition (PLD).
The film growth processes were monitored by reflective high energy
electronic diffraction (RHEED). Microstructure, conductivity, and
magnetism of these doped films are found strongly affected by the
oxygen pressure and substrate temperature
Ts. Grown at a
Ts around 750
C in an oxygen pressure of 0.2
mbar, the dopants are found existing as oxide inclusions. The
doped film thus behaves as an insulator and shows diamagnetism in
a magnetic field parallel to the film surface. However, in the
doped film grown at a reduced temperature of 630
C in a vacuum, no impurity phase can be identified. The
film shows a saturated magnetic moment of
and
a fairly good conductivity at room temperature. It is then
concluded that nonequilibrium growth at lower temperatures in
vacuum is essential for a high solubility of Co in the
lattice and thus the ferromagnetism.
75.50.Pp - Magnetic semiconductors.
81.15.Fg - Laser deposition.
68.55.Jk - Structure and morphology; thickness; crystalline orientation and texture.
61.14.Hg - Low-energy electron diffraction (LEED) and reflection high-energy electron diffraction (RHEED).
© EDP Sciences, Società Italiana di Fisica, Springer-Verlag 2003
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